FX-3 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot

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RTL8213B-CG 10/100/1000M Copper to 100Base-FX/1000Base-X Fiber Media Converter DRAFT DATASHEET (CONFIDENTIAL: Development Partners Only) Rev. 1.0 30 D

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isc Silicon NPN Power Transistor MD1802FX DESCRIPTION · High Voltage · Low base-drive requirements · Collector-Emitter Sustaining Voltage- : VCEO(SU

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www.DataSheet4U.com MD2001FX High voltage NPN power transistor for standard definition CRT display Features ■ ■ ■ ■ ■ State-of-the-art technology: –

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® ST2310FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNT

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isc Silicon NPN Power Transistor DESCRIPTION · High Voltage · Low base-drive requirements · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (

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www.DataSheet4U.com ST2001FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIAN

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MITSUBISHI ELECTRIC Programmable Controllers Installation Manual for Base Units of the FX3U Series Art-no.: 169938 ENG, Version B, 17082007 Specifica

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www.DataSheet4U.com Nickel Barrier Multilayer Ceramic Capacitors Features: • Multilayer ceramic chip capacitor. • Nickel barrier termination. • High

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h S a t a KV-25FX30B D . w KV-25FX30E w w KV-25FX30K MODEL t SERVICE MANUAL e e COMMANDER DEST CHASSIS NO. 4U . m o c FE-2 CHASSIS MODEL COMMANDE

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MD1803DFX High voltage NPN Power transistor for standard definition CRT display Features ■ State-of-the-art technology: – Diffused collector “enhance

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60V, 50A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFX6005T uses advanced trench technology and design to provide excellent RDS(on) with low gate

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7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s propriet

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www.DataSheet4U.com www.DataSheet4U.com MD1802FX High voltage NPN Power transistor for standard Definition CRT display Preliminary Data General fea

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40V, 30A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFX4003T uses advanced trench technology and design to provide excellent RDS(on) with low gate

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30V, 90A P-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFX3009PT uses advanced trench technology and design to provide excellent RDS(on) with low gat

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4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION This power mosfet is an N-channel enhancement mode power MOS field effect transistor which is produced u

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Surface Mount Solid Polymer Aluminum Electrolytic Capacitors FEATURES • LOW IMPEDANCE & ESR AT HIGH FREQUENCY RoHS • HIGH RIPPLE CURRENT Compliant • R

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www.DataSheet4U.com PIC18FXX20 Data Sheet 64/80-Pin High Performance, 1 Mbit Enhanced FLASH Microcontrollers with A/D  2003 Microchip Technology In

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