SemiHow
KSG13005A - NPN Silicon Power Transistor
KSX13005A Series
KSB13005A/KSG13005A/KSU13005A KSD13005A/KSH13005A/KSH13005AF
NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 4A
General D
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ETC
ECG130 - Transistors
www.DataSheet4U.com
(19 views)
E-Switch
EG1307 - EG Switch
SLIDE SWITCHES
1307
SERIES E G SWITCHES
P.C. MOUNTING
Schematic
1
5
COM. 2 3 4 COM
P.C. MOUNTING
SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTIC
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Roithner
LM-106-G130 - IR diode laser
LM-106-G130
TECHNICAL DATA
IR Diode Laser Module
LM-106-G130 is a multi purpose, low cost, small size infrared diode laser module, featuring a brass h
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Analog Devices
ADG1308 - Multiplexers
FEATURES
33 V supply range 130 Ω on resistance Fully specified at ±15 V/+12 V 3 V logic-compatible inputs Rail-to-rail operation Break-before-make swi
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SemiHow
KSG13003A - NPN Silicon Power Transistor
KSX13003A Series
KSB13003A / KSG13003A KSC13003A / KSH13003A
NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.5A
General Description
• Hi
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Murata
GRM615C0G130G50 - CHIP MONOLITHIC CERAMIC CAPACITOR
This is the PDF file of catalog No.C02E-6
CHIP MONOLITHIC CERAMIC CAPACITOR
High-power Type GRM600 Series
C02E6.pdf 00.7.18
s Features 1. Mobile Tel
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EIC
G130 - SIDACs
www.DataSheet4U.com
G105 ~ G270
IT(RSM) = 1.0 Amperes VBO = 95 thru 280 Volts
SIDACs
DO - 41
0.107 (2.7) 0.080 (2.0)
1.00 (25.4) MIN.
MECHANICAL
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APM
APG130N10NF - 100V N-Channel Enhancement Mode MOSFET
Description
APG130N10NF
100V N-Channel Enhancement Mode MOSFET
The APG120N10NF uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low
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Vishay
VLMG1300 - Highbright 0603 ChipLED
VLMS1300, VLMO1300, VLMY130., VLMG1300, VLMTG1300, VLMB13..
www.vishay.com
Vishay Semiconductors
Highbright 0603 ChipLED
DESCRIPTION The new ChipL
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Analog Devices
ADG1309 - Multiplexers
FEATURES
33 V supply range 130 Ω on resistance Fully specified at ±15 V/+12 V 3 V logic-compatible inputs Rail-to-rail operation Break-before-make swi
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New Japan Radio
NJG1307R - DRIVER AMPLIFIER GaAs MMIC
NJG1307R
DRIVER AMPLIFIER GaAs MMIC
n GENERAL DESCRIPTION NJG1307R is a GaAs MMIC designed mainly for driver amplifier of Cellular Phone. This is an
(8 views)
Shaanxi Qunli
3DG130 - NPN Silicon High Frequency Middle Power Transistor
Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DG130
NPN Silicon High Frequency Middle Power Transistor
Features:
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Inchange Semiconductor
3DG13007 - Silicon NPN Power Transistor
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Vishay
VLMTG1300 - Highbright 0603 ChipLED
VLMS1300, VLMO1300, VLMY130., VLMG1300, VLMTG1300, VLMB13..
www.vishay.com
Vishay Semiconductors
Highbright 0603 ChipLED
DESCRIPTION The new ChipL
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Bosch
SMG130 - 3-axis gyroscope
Department AE/ESE3
Datasheet SMG130
Page 0/47
Version 1.0 No. 1 279 929 820 Date 01.10.2015
0 Document History
Version Comment 1.0 Initial Version:
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muRata
SAFCG130MCA0T00 - Filters
o AMPS/ADC
Dot Marking(ø0.2)
3.8±0.2
M∗
4-1.27±0.13
Filters for Communication Equipment
for IF
SAW Filters
(0.20)
1.15max. 3.8±0.2
1.50±0.13
SA
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General Semiconductor
SMCG130A - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
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Microsemi
MSMLG130A - Surface Mount 3000 Watt Transient Voltage Suppressor
MSMLG5.0A – MSMLG170CAe3, MSMLJ5.0A – MSMLJ170CAe3 Surface Mount 3000 Watt Transient Voltage Suppressor
1 Product Overview
The MSMLG5.0A–MSMLG170CA an
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New Japan Radio
NJG1301V - MEDIUM POWER AMPLIFIER GaAs MMIC
NJG1301V
MEDIUM POWER AMPLIFIER GaAs MMIC
nGENERAL DESCRIPTION NJG1301V is a medium power amplifier which is designed for use of output stage of Japa
(4 views)