G130 Datasheet | Specifications & PDF Download

www.hygroup.com.tw www.hygroup.com.tw P6KEG Series Axial Leaded Uni/Bi-Directional TVS Diodes Peak Pulse Power - 600 W Reverse Breakdown Voltage -

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG130 NPN Silicon High Frequency Middle Power Transistor Features:

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LM-106-G130 TECHNICAL DATA IR Diode Laser Module LM-106-G130 is a multi purpose, low cost, small size infrared diode laser module, featuring a brass h

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KSX13005A Series KSB13005A/KSG13005A/KSU13005A KSD13005A/KSH13005A/KSH13005AF NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 4A General D

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www.hygroup.com.tw www.hygroup.com.tw P6KEG Series Axial Leaded Uni/Bi-Directional TVS Diodes Peak Pulse Power - 600 W Reverse Breakdown Voltage -

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NJG1308F DRIVER-AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1308F is a GaAs MMIC Driver-Amplifier for 800MHz1.9 GHz band of Cellular phone System. It

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NJG1301V MEDIUM POWER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1301V is a medium power amplifier which is designed for use of output stage of Japa

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NJG1304E MEDIUM POWER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1304E is a GaAs MMIC designed mainly for driver amplifier of PHS base station in Ja

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NJG1307R DRIVER AMPLIFIER GaAs MMIC n GENERAL DESCRIPTION NJG1307R is a GaAs MMIC designed mainly for driver amplifier of Cellular Phone. This is an

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NJG1309VB2 TRANSMITTING POWER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1309VB2 is a positive voltage supply type GaAs power amplifier MMIC design

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Description APG130N10NF 100V N-Channel Enhancement Mode MOSFET The APG120N10NF uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low

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SLIDE SWITCHES 1307 SERIES E G SWITCHES P.C. MOUNTING Schematic 1 5 COM. 2 3 4 COM P.C. MOUNTING SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTIC

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NJG1302V MEDIUM POWER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1302V is a GaAs MMIC designed mainly for the final stage power amplifier of Japanes

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FEATURES 33 V supply range 130 Ω on resistance Fully specified at ±15 V/+12 V 3 V logic-compatible inputs Rail-to-rail operation Break-before-make swi

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MSMLG5.0A – MSMLG170CAe3, MSMLJ5.0A – MSMLJ170CAe3 Surface Mount 3000 Watt Transient Voltage Suppressor 1 Product Overview The MSMLG5.0A–MSMLG170CA an

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SMBJ5.0 thru SMBJ170CA and SMBG5.0 thru SMBG170CA SCOTTSDALE DIVISION SURFACE MOUNT 600 Watt Transient Voltage Suppressor DESCRIPTION This SMBJ5.0-1

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www.DataSheet4U.com G105 ~ G270 IT(RSM) = 1.0 Amperes VBO = 95 thru 280 Volts SIDACs DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. MECHANICAL

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This is the PDF file of catalog No.C02E-6 CHIP MONOLITHIC CERAMIC CAPACITOR High-power Type GRM600 Series C02E6.pdf 00.7.18 s Features 1. Mobile Tel

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FEATURES 33 V supply range 130 Ω on resistance Fully specified at ±15 V/+12 V 3 V logic-compatible inputs Rail-to-rail operation Break-before-make swi

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