G2307 Datasheet | Specifications & PDF Download

DMG2307LQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -30V RDS(ON) max 90mΩ @ VGS = -10V 134mΩ @ VGS = -4.5V ID max TA = +25°C -3.8A -

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NEW PRODUCT Product Summary V(BR)DSS -30V RDS(ON) max 90mΩ @ VGS = -10V 134mΩ @ VGS = -4.5V ID max TA = +25°C -3.8A -3.1A DMG2307L P-CHANNEL ENHA

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www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com

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www.DataSheet4U.com Pb Free Plating Product CORPORATION G2307 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2004/11/02 REVISED DATE :2005/10

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Elektronische Bauelemente SMG2307PE -5.2 A, -20 V, RDS(ON) 31 mΩ P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halo

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Elektronische Bauelemente SMG2307 -4.0A, -16V,RDS(ON) 60m P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description A L The SMG2

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