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SMG2307PE P-Channel MOSFET

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Description

Elektronische Bauelemente SMG2307PE -5.2 A, -20 V, RDS(ON) 31 mΩ P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halo.
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat diss.

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Datasheet Specifications

Part number
SMG2307PE
Manufacturer
SeCoS
File Size
468.09 KB
Datasheet
SMG2307PE-SeCoS.pdf
Description
P-Channel MOSFET

Features

* Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. SC-59 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1

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