SMG2361P P-Channel MOSFET

SeCoS Halbleitertechnologie

Description

SMG2361P Elektronische Bauelemente -3.4A , -60V , RDS(ON) 210 mΩ P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halog.
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat diss.

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Datasheet Specifications

Part number: SMG2361P
Manufacturer: SeCoS Halbleitertechnologie
File Size: 444.48 KB
Datasheet: SMG2361P-SeCoSHalbleitertechnologie.pdf
Description: P-Channel MOSFET

Features

* Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. 1 K E D F G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H Millimeter M

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SMG2361P P-Channel MOSFET SeCoS Halbleitertechnologie

SeCoS Halbleitertechnologie SMG2361P-like datasheet