SMG2392N N-Channel MOSFET

SeCoS Halbleitertechnologie

Description

SMG2392N Elektronische Bauelemente 0.6A, 150V, RDS(ON) 2.6Ω N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halog.
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat diss.

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Datasheet Specifications

Part number: SMG2392N
Manufacturer: SeCoS Halbleitertechnologie
File Size: 542.95 KB
Datasheet: SMG2392N-SeCoSHalbleitertechnologie.pdf
Description: N-Channel MOSFET

Features

* Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper lead frame SC-59 saves board space. Fast switching speed. High performance trench technology. 1 K E D F REF. A B C D E F G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.

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SMG2392N N-Channel MOSFET SeCoS Halbleitertechnologie

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