Datasheet Details
- Part number
- SMG2390N
- Manufacturer
- SeCoS
- File Size
- 138.39 KB
- Datasheet
- SMG2390N-SeCoS.pdf
- Description
- N-Channel MosFET
SMG2390N Description
Elektronische Bauelemente SMG2390N N-Channel Enhancement Mode Mos.FET 1.1 A, 150 V, RDS(ON) 0.700 RoHS Compliant Product A suffix of “-C” specifie.
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat diss.
SMG2390N Features
* Low RDS(on) provides higher efficiency and extends battery life.
* Low thermal impedance copper leadframe SC-59 saves
board space.
* Fast switching speed.
* High performance trench technology. PRODUCT SUMMARY
PRODUCT SUMMARY
VDS(V) 150
RDS(on) ( 0.700@VGS= 10V 1.200@VGS= 5.5V
📁 Related Datasheet
📌 All Tags
SMG2390N Stock/Price