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SMG2300 - N-Channel MosFET

General Description

A L

The SMG2300 provide the designer with best combination S of fast switching, low on-resistance and cost-effectiveness.

The SMG2300 is universally used for all commercial-industrial surface mount applications.

Key Features

  • Low on-resistance.
  • Capable of 2.5V gate drive.
  • Small package outline C H Drain Gate Source J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage T.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMG2300 6A, 20V,RDS(ON) 28m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Description A L * The SMG2300 provide the designer with best combination S of fast switching, low on-resistance and cost-effectiveness. * The SMG2300 is universally used for all commercial-industrial surface mount applications. 3 Top View 21 B D G Features * Low on-resistance * Capable of 2.5V gate drive * Small package outline C H Drain Gate Source J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.