SMG2302N Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET RoHS pliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are Features - Low RDS(on) provides higher efficiency and extends battery life. - Low thermal impedance copper lead frame SC-59 saves board space. - Fast switching speed. - High performance trench technology. Application DC-DC converters and power management in portable and battery-powered products such as puters, printers,...