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SMG2302 - N-Channel MosFET

General Description

The SMG2302 provide the designer with the best Combination of fast switching, low on-resistance and cost-effectiveness.

Key Features

  • Capable of 2.5V gate drive.
  • Small package outline 3 S Top View 21 B D G C H Drain Gate Source J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Marking : 2302 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current, VGS@4.5V Continuous Drain Current,3 VGS@4.5V Pulsed Drain Current 1,2 Total Power Dissipation Linear Derat.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMG2302 3.2A, 20V,RDS(ON) 85m N-Channel Enhancement Mode Power Mos.FET Description RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A L The SMG2302 provide the designer with the best Combination of fast switching, low on-resistance and cost-effectiveness. Features * Capable of 2.5V gate drive * Small package outline 3 S Top View 21 B D G C H Drain Gate Source J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Marking : 2302 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current, VGS@4.5V Continuous Drain Current,3 VGS@4.