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SMG2304 - N-Channel MosFET

General Description

The SMG2304 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

Key Features

  • CJ.
  • Reliable And Rugged H.
  • Super High Dense Cell Design For Extremely Low RDS(ON) Drain K.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMG2304 2.7A, 25V,RDS(ON) 117m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A Description The SMG2304 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. L 3 S Top View 21 B D G Features CJ * Reliable And Rugged H * Super High Dense Cell Design For Extremely Low RDS(ON) Drain K Applications Gate Source D * Power Management in Notebook Computer * Protable Equipment * Battery Powered System G SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.