SMG2304A Datasheet | SeCoS Halbleitertechnologie GmbH

Description The SMG2304A utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device. The SMG2304A is universally used for all mercial-industrial applications. Features - Small Package Outline - Simple Drive Requirment 2.5A, 30V,RDS(ON) 117m N-Channel Enhancement Mode Power Mos.FET Ro HS pliant Product S Top View H Drain Gate Source SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Marking : 2304A Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3 VGS@10V Continuous Drain Current,3 VGS@10V Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID@TA=25 o C ID@TA=70 o C IDM PD@TA=25 o C Tj, Tstg Ratings 30 ±20 2.5 2.0 10 1.38 0.01 -55~+150 Unit V V A A A W W / o C o C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Max. Symbol Rthj-a Ratings 90 Unit o C /W http://.Se Co SGmb H./ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente 2.5A, 30V,RDS(ON) 117m N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25o C Unless otherwise specified) Parameter...