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SMG2304A - N-Channel MosFET

General Description

The SMG2304A utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device.

The SMG2304A is universally used for all commercial-industrial applications.

Key Features

  • Small Package Outline.
  • Simple Drive Requirment SMG2304A 2.5A, 30V,RDS(ON) 117m N-Channel Enhancement Mode Power Mos. FET RoHS Compliant Product A L 3 S Top View 21 B D G C H Drain Gate Source J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Marking : 2304A Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3 VGS@10V.

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Elektronische Bauelemente Description The SMG2304A utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device. The SMG2304A is universally used for all commercial-industrial applications. Features * Small Package Outline * Simple Drive Requirment SMG2304A 2.5A, 30V,RDS(ON) 117m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A L 3 S Top View 21 B D G C H Drain Gate Source J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.