SMG2301P Description
The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones.
SMG2301P Key Features
- Low RDS(on) provides higher efficiency and extends battery life
- Low thermal impedance copper leadframe SC-59 saves board space
- Fast switching speed
- High performance trench technology
- 20 ±8 -2.6 -1.5 -10 ±1.6 1.25 0.8 -55 ~ 150
- 2.6 A, -20 V, RDS(ON) 130 m P-Channel Enhancement MOSFET
- 1 IDSS
- V VDS = VGS, ID = -250μA nA VDS = 0V, VGS= ±8V
- 12.2 1.1 1.5 6.5 20 31 21
- ID= -2.6A nC VDS= -5V
SMG2301P Applications
- Low RDS(on) provides higher efficiency and extends battery life