SMG2392N Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 0.6A, 150V, RDS(ON) 2.6Ω N-Channel Enhancement Mode MOSFET Ro HS pliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are SC-59 Top View 1 2 2 Features Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper lead frame SC-59 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 REF. G H J K L Application DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package SC-59 MPQ 3K Leader Size 7’ inch...