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SMG2398NE - N-Channel MosFET

General Description

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.

Key Features

  • Low RDS(on) provides higher efficiency and extends battery life.
  • Low gate charge.
  • Fast switching.
  • Miniature SC-59 surface mount package saves board space. SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMG2398NE 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low gate charge  Fast switching  Miniature SC-59 surface mount package saves board space.