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SMG2390N Datasheet N-channel MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente SMG2390N N-Channel Enhancement Mode Mos.FET 1.1 A, 150 V, RDS(ON) 0.

General Description

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.

Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones.

Key Features

  • Low RDS(on) provides higher efficiency and extends battery life.
  • Low thermal impedance copper leadframe SC-59 saves board space.
  • Fast switching speed.
  • High performance trench technology.

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