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SMG2398N - N-Channel MosFET

General Description

These miniature surface mount MOSFETs utilize High Cell Density process.

Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

Key Features

  • Low RDS(on) provides higher efficiency and extends battery life.
  • Low gate charge.
  • Fast switching.
  • Miniature SC-59 surface mount package saves board space. SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMG2398N 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low gate charge  Fast switching  Miniature SC-59 surface mount package saves board space.