SMG2398NE N-Channel MosFET

SeCoS

Description

Elektronische Bauelemente SMG2398NE 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies.
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat diss.

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Datasheet Specifications

Part number: SMG2398NE
Manufacturer: SeCoS
File Size: 141.90 KB
Datasheet: SMG2398NE-SeCoS.pdf
Description: N-Channel MosFET

Features

* Low RDS(on) provides higher efficiency and extends battery life.
* Low gate charge
* Fast switching
* Miniature SC-59 surface mount package saves board space. SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J PRODUCT SUMMARY SMG2398NE VDS(V) 60 RDS(on) (m 194@VGS= 10V 273@V

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N-Channel MosFET SeCoS

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