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SMG2398NE - N-Channel MosFET

SMG2398NE Description

Elektronische Bauelemente SMG2398NE 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies.
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat diss.

SMG2398NE Features

* Low RDS(on) provides higher efficiency and extends battery life.
* Low gate charge
* Fast switching
* Miniature SC-59 surface mount package saves board space. SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J PRODUCT SUMMARY SMG2398NE VDS(V) 60 RDS(on) (m 194@VGS= 10V 273@V

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Datasheet Details

Part number
SMG2398NE
Manufacturer
SeCoS
File Size
141.90 KB
Datasheet
SMG2398NE-SeCoS.pdf
Description
N-Channel MosFET

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N-Channel MosFET SeCoS
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