G2314 Datasheet | Specifications & PDF Download

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PRELIMINARY DATA SHEET GaAs HBT INTEGRATED CIRCUIT uPG2314T5N POWER AMPLIFIER FOR BluetoothTM Class1 DESCRIPTION The uPG2314T5N is a GaAs HBT MMIC p

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/05/16 REVISED DATE : G2314 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID

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Elektronische Bauelemente SMG2314N 5.3A , 20V , RDS(ON) 32 m N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies ha

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Elektronische Bauelemente SMG2314 3.5A, 20V,RDS(ON)75m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMG2314 util

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Elektronische Bauelemente SMG2314NE 5.3 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies

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