GOFORD G23N06K N-Channel Enhancement Mode Power .
Sirectifier Semiconductors
SG23N06DT - Discrete IGBTs
www.DataSheet4U.com SG23N06T, SG23N06DT Discrete IGBTs Dimensions TO-247AD Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.6.
Sirectifier Semiconductors
SG23N06T - Discrete IGBTs
www.DataSheet4U.com SG23N06T, SG23N06DT Discrete IGBTs Dimensions TO-247AD Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.6.
SeCoS
SSG23N06S-C - N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente SSG23 06S-C 23A, 60V, RDS(O ) 3.8mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.
GOFORD
G23N06 - N-Channel Enhancement Mode Power MOSFET
GOFORD G23N06K N-Channel Enhancement Mode Power MOSFET Description The G23N06K uses advanced trench technology to provide excellent RDS(ON) , low .
GOFORD
G23N06K - N-Channel Enhancement Mode Power MOSFET
GOFORD G23N06K N-Channel Enhancement Mode Power MOSFET Description The G23N06K uses advanced trench technology to provide excellent RDS(ON) , low .
