G23N06 Datasheet | Specifications & PDF Download

GOFORD G23N06K N-Channel Enhancement Mode Power MOSFET Description The G23N06K uses advanced trench technology to provide excellent RDS(ON) , low

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Elektronische Bauelemente SSG23 06S-C 23A, 60V, RDS(O ) 3.8mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha

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GOFORD G23N06K N-Channel Enhancement Mode Power MOSFET Description The G23N06K uses advanced trench technology to provide excellent RDS(ON) , low

Rating: 1 ★ (2 votes)

www.DataSheet4U.com SG23N06T, SG23N06DT Discrete IGBTs Dimensions TO-247AD Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.6

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www.DataSheet4U.com SG23N06T, SG23N06DT Discrete IGBTs Dimensions TO-247AD Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.6

Rating: 1 ★ (1 votes)