GA05JT12-263 Datasheet | Specifications & PDF Download

X

GA05JT12-263 Junction Transistor

GA05JT12-263   Normally – OFF Silicon Carbide .

GeneSiC

GA05JT12-263 - Junction Transistor

GA05JT12-263   Normally – OFF Silicon Carbide Junction Transistor Features Package VDS RDS(ON) ID = 1200 V = 260 mΩ = 5A  175 °C maximum operati.
Rating: 1 (2 votes)
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts