nexperia
GANB4R8-040CBA - Gallium Nitride (GaN) FET
GANB4R8-040CBA
40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a
2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP)
10 April 2024
P
Rating:
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(3 votes)
