* Enhancement mode - normally-off power switch
* Bi-directional device
* Ultra high switching speed capability
* Ultra-low on-state resistance
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Wafer Level Chip-Scale Pa
GANB4R8-040CBA Datasheet (1.22 MB)
GANB4R8-040CBA
1.22 MB
Gallium nitride (gan) fet.
GANB4R8-040CBA 40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP) 10 April 2024 P.
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