GAN039-650NBB - Gallium Nitride (GaN) FET
GAN039-650NBB Features
* Simplified driver design as standard level MOSFET gate drivers can be used:
* 0 V to 12 V drive voltage
* Gate threshold voltage VGSth of 4 V
* Robust gate oxide with ±20 V VGS rating
* High gate threshold voltage of 4 V for gate bounce immunity
* Lo
