GAN039-650NBB

Gallium Nitride (GaN) FET

nexperia

* Simplified driver design as standard level MOSFET gate drivers can be used:

* 0 V to 12 V drive voltage

* Gate threshold voltage VGSth of 4 V

* Robust gate oxide with ±20 V VGS rating

* High gate threshold voltage of 4 V for gate bounce immunity

* Lo

GAN039-650NBB

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Gallium nitride (gan) fet.

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GAN039-650NBB Gallium Nitride GaN FET nexperia

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