GAN039-650NTB Datasheet - nexperia

GAN039-650NTB Gallium Nitride (GaN) FET

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies * offering superior reliability and performance. 2. Fea.

GAN039-650NTB Features

* Simplified driver design as standard level MOSFET gate drivers can be used:

* 0 V to 12 V drive voltage

* Gate threshold voltage VGSth of 4 V

* Robust gate oxide with ±20 V VGS rating

* High gate threshold voltage of 4 V for gate bounce immunity

* Lo

GAN039-650NTB Datasheet (476.31 KB)