GAN080-650EBE GaN FET

nexperia

Description

DFN8080-8 GAN080-650EBE 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package 5 May 2023 Product data sheet 1.General descripti.
The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package.

📥 Download Datasheet

GAN080-650EBE Datasheet Preview — Preview of GAN080-650EBE PDF

Datasheet Specifications

Part number: GAN080-650EBE
Manufacturer: nexperia ↗
File Size: 315.41 KB
Datasheet: GAN080-650EBE-nexperia.pdf
Description: GaN FET

Features

* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge

Applications

* ESD protection
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Low package inductance and low package resistance 3. Applications
* High power density and high efficiency power conversion
* AC-to-DC converters, totem pole

GAN080-650EBE Distributors

📁 Related Datasheet

📌 All Tags

GAN080-650EBE GaN FET nexperia

nexperia GAN080-650EBE-like datasheet