GAN041-650WSB

GaN FET

nexperia

* Ultra-low reverse recovery charge

* Simple gate drive (0 V to +10 V or 12 V)

* Robust gate oxide (±20 V capability)

* High gate threshold voltage (+4 V) for very good gate bounce immunity

* Very low source-drain voltage in reverse conduction mode

* T

GAN041-650WSB

310.87 KB

Gan fet.

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GAN041-650WSB GaN FET nexperia

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