GAN041-650WSB Datasheet, Fet, nexperia

GAN041-650WSB Features

• Fet
• Ultra-low reverse recovery charge
• Simple gate drive (0 V to +10 V or 12 V)
• Robust gate oxide (±20 V capability)
• High gate threshold voltage (+4 V

PDF File Details

Part number:

GAN041-650WSB

Manufacturer:

nexperia ↗

File Size:

310.87kb

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📄 Datasheet

Description:

Gan fet. The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia

GAN041-650WSB Application

• Applications
• Hard and soft switching converters for industrial and datacom power
• Bridgeless totempole PFC
• PV and UPS i

TAGS

GAN041-650WSB

nexperia

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