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GAN041-650WSB GaN FET

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Description

GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package 12 January 2021 Product data sheet 1.General .
The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package.

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Features

* Ultra-low reverse recovery charge
* Simple gate drive (0 V to +10 V or 12 V)
* Robust gate oxide (±20 V capability)
* High gate threshold voltage (+4 V) for very good gate bounce immunity
* Very low source-drain voltage in reverse conduction mode
* T

Applications

* Hard and soft switching converters for industrial and datacom power
* Bridgeless totempole PFC
* PV and UPS inverters
* Servo motor drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot

GAN041-650WSB Distributors

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