GAN111-650WSB

Gallium Nitride (GaN) FET

nexperia

* Ultra-low reverse recovery charge

* Simple gate drive (0 V to +10 V or +12 V)

* Robust gate oxide (±20 V capability)

* High gate threshold voltage (+4 V) for very good gate bounce immunity

* Very low source-drain voltage in reverse conduction mode

GAN111-650WSB

390.86 KB

Gallium nitride (gan) fet.

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GAN111-650WSB Gallium Nitride GaN FET nexperia

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