GAN111-650WSB Datasheet, Fet, nexperia

GAN111-650WSB Features

• Fet
• Ultra-low reverse recovery charge
• Simple gate drive (0 V to +10 V or +12 V)
• Robust gate oxide (±20 V capability)
• High gate threshold voltage (+4

PDF File Details

Part number:

GAN111-650WSB

Manufacturer:

nexperia ↗

File Size:

390.86kb

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📄 Datasheet

Description:

Gallium nitride (gan) fet. The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia

GAN111-650WSB Application

• Applications
• Hard and soft switching converters for industrial and datacom power
• AC/DC Bridgeless totem-pole PFC
• DC/DC

TAGS

GAN111-650WSB

nexperia

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