GAN111-650WSB - Gallium Nitride (GaN) FET
GAN111-650WSB Features
* Ultra-low reverse recovery charge
* Simple gate drive (0 V to +10 V or +12 V)
* Robust gate oxide (±20 V capability)
* High gate threshold voltage (+4 V) for very good gate bounce immunity
* Very low source-drain voltage in reverse conduction mode
