Datasheet4U Logo Datasheet4U.com

GAN111-650WSB Datasheet - nexperia

GAN111-650WSB - Gallium Nitride (GaN) FET

GAN111-650WSB Features

* Ultra-low reverse recovery charge

* Simple gate drive (0 V to +10 V or +12 V)

* Robust gate oxide (±20 V capability)

* High gate threshold voltage (+4 V) for very good gate bounce immunity

* Very low source-drain voltage in reverse conduction mode

GAN111-650WSB-nexperia.pdf

Preview of GAN111-650WSB PDF
GAN111-650WSB Datasheet Preview Page 2 GAN111-650WSB Datasheet Preview Page 3

Datasheet Details

Part number:

GAN111-650WSB

Manufacturer:

nexperia ↗

File Size:

390.86 KB

Description:

Gallium nitride (gan) fet.

📁 Related Datasheet

📌 All Tags