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GAN111-650WSB - Gallium Nitride (GaN) FET

nexperia

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Datasheet Details

Part number	GAN111-650WSB
Manufacturer	nexperia ↗
File Size	390.86 KB
Description	Gallium Nitride (GaN) FET
Datasheet	GAN111-650WSB-nexperia.pdf

GAN111-650WSB Product details

Description

The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. offering superior reliability and performance.

Features

Ultra-low reverse recovery charge.
Simple gate drive (0 V to +10 V or +12 V).
Robust gate oxide (±20 V capability).
High gate threshold voltage (+4 V) for very good gate bounce immunity.
Very low source-drain voltage in reverse conduction mode.
Transient over-voltage capability 3.

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Published: Jul 10, 2024 |