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GAN190-650EBE GaN FET

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Description

DFN8080-8 GAN190-650EBE 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package 19 April 2023 Product data sheet 1.General descr.
The GAN140-650EBE is a general purpose 650 V, 190 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package.

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Features

* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge

Applications

* ESD protection
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Low package inductance and low package resistance 3. Applications
* High power density and high efficiency power conversion
* AC-to-DC converters, totem pole

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