* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge
* Qualified for standard applications
* ESD protection
* RoHS, Pb-free, REACH-compliant
* Hi
GAN190-650EBE Datasheet (7.91 MB)
GAN190-650EBE
7.91 MB
Gan fet.
DFN8080-8
GAN190-650EBE
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN
8 mm x 8 mm package
19 April 2023
Product data sheet
1. General descr.
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