GAN039-650NBBA

GaN FET

nexperia

GAN039-650NBBA Features

* Fully automotive qualified to AEC-Q101:

* 175 °C rating suitable for thermally demanding environments

* Simplified driver design as standard level MOSFET gate drivers can be used:

* 0 V to 12 V drive voltage

* Gate threshold voltage VGSth of 4 V

* Ro

GAN039-650NBBA General Description

The GAN039-650NBBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies

* offering superior reliability and perform.

GAN039-650NBBA Datasheet (296.12 KB)