GAN039-650NBBA - GaN FET
The GAN039-650NBBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package.
It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies * offering superior reliability and perform
GAN039-650NBBA Features
* Fully automotive qualified to AEC-Q101:
* 175 °C rating suitable for thermally demanding environments
* Simplified driver design as standard level MOSFET gate drivers can be used:
* 0 V to 12 V drive voltage
* Gate threshold voltage VGSth of 4 V
* Ro
