GAN063-650WSA GaN FET

nexperia

Description

GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET 20 March 2020 Product data sheet 1.General .
The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET.

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Datasheet Specifications

Part number: GAN063-650WSA
Manufacturer: nexperia ↗
File Size: 282.06 KB
Datasheet: GAN063-650WSA-nexperia.pdf
Description: GaN FET

Features

* Ultra-low reverse recovery charge
* Simple gate drive (0 V to +10 V or 12 V)
* Robust gate oxide (±20 V capability)
* High gate threshold voltage (+4 V) for very good gate bounce immunity
* Very low source-drain voltage in reverse conduction mode
* T

Applications

* Hard and soft switching converters for industrial and datacom power
* Bridgeless totempole PFC
* PV and UPS inverters
* Servo motor drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot tota

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