GANB012-040CBA bi-directional Gallium Nitride FET

nexperia

Description

WLCSP12 GANB012-040CBA 40 V, 12 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.2 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) 12 March.
The GANB012-040CBA is a 40 V, 12 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) p.

📥 Download Datasheet

GANB012-040CBA Datasheet Preview — Preview of GANB012-040CBA PDF

Datasheet Specifications

Part number: GANB012-040CBA
Manufacturer: nexperia ↗
File Size: 903.12 KB
Datasheet: GANB012-040CBA-nexperia.pdf
Description: bi-directional Gallium Nitride FET

Features

* Enhancement mode - normally-off power switch
* Bi-directional device
* Ultra high switching speed capability
* Ultra-low on-state resistance
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Wafer Level Chip-Scale Pa

Applications

* High-side load switch
* OVP protection in smart phone USB port
* Power switch circuits
* Stand-by power system 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min VDD drain-drain voltage -40 °C ≤ Tj ≤ 125 °C [1] - ID dr

GANB012-040CBA Distributors

📁 Related Datasheet

📌 All Tags

GANB012-040CBA bi-directional Gallium Nitride FET nexperia

nexperia GANB012-040CBA-like datasheet