Part number:
GANB012-040CBA
Manufacturer:
File Size:
903.12 KB
Description:
Bi-directional gallium nitride fet
GANB012-040CBA Datasheet (903.12 KB)
GANB012-040CBA Datasheet (903.12 KB)
GANB012-040CBA
903.12 KB
Bi-directional gallium nitride fet
* Enhancement mode - normally-off power switch
* Bi-directional device
* Ultra high switching speed capability
* Ultra-low on-state resistance
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Wafer Level Chip-Scale Pa
📁 Related Datasheet
GANB4R8-040CBA - Gallium Nitride (GaN) FET
(nexperia)
GANB4R8-040CBA
40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a
2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP)
10 April 2024
P.
GAN039-650NBB - Gallium Nitride (GaN) FET
(nexperia)
CCPAK1212
GAN039-650NBB
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212
package
28 May 2024
Product data sheet
1. General description
Th.
GAN039-650NBBA - GaN FET
(nexperia)
GAN039-650NBBA
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212
package
19 April 2021
Objective data sheet
1. General description
The GAN0.
GAN039-650NTB - Gallium Nitride (GaN) FET
(nexperia)
CCPAK1212i
GAN039-650NTB
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i
package
5 December 2023
Product data sheet
1. General descript.
GAN041-650WSB - GaN FET
(nexperia)
GAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
12 January 2021
Product data sheet
1. General description
The GAN041-650W.
GAN063-650WSA - GaN FET
(nexperia)
GAN063-650WSA
650 V, 50 mΩ Gallium Nitride (GaN) FET
20 March 2020
Product data sheet
1. General description
The GAN063-650WSA is a 650 V, 50 mΩ Gal.
