* Enhancement mode - normally-off power switch
* Bi-directional device
* Ultra high switching speed capability
* Ultra-low on-state resistance
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Wafer Level Chip-Scale Pa
GANB012-040CBA Datasheet (903.12 KB)
GANB012-040CBA
903.12 KB
Bi-directional gallium nitride fet.
WLCSP12 GANB012-040CBA 40 V, 12 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.2 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) 12 March.
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