* Enhancement mode - normally-off power switch
* Bi-directional device
* Ultra high switching speed capability
* Ultra-low on-state resistance
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Wafer Level Chip-Scale Pa
GANB8R0-040CBA Datasheet (956.86 KB)
GANB8R0-040CBA
956.86 KB
40v bi-directional gallium nitride fet.
WLCSP16
GANB8R0-040CBA
40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a
1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP)
31 Janu.
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