GANB8R0-040CBA 40V bi-directional Gallium Nitride FET

nexperia

Description

WLCSP16 GANB8R0-040CBA 40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) 31 Janu.
The GANB8R0-040CBA is a 40 V, 8.

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Datasheet Specifications

Part number: GANB8R0-040CBA
Manufacturer: nexperia ↗
File Size: 956.86 KB
Datasheet: GANB8R0-040CBA-nexperia.pdf
Description: 40V bi-directional Gallium Nitride FET

Features

* Enhancement mode - normally-off power switch
* Bi-directional device
* Ultra high switching speed capability
* Ultra-low on-state resistance
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Wafer Level Chip-Scale Pa

Applications

* High-side load switch
* OVP protection in smart phone USB port
* DC-to-DC converters
* Power switch circuits
* Stand-by power system 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDD drain-drain voltage ID drain current Ptot

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GANB8R0-040CBA 40V bi-directional Gallium Nitride FET nexperia

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