GANB8R0-040CBA - 40V bi-directional Gallium Nitride FET

nexperia

GANB8R0-040CBA Datasheet Preview — Preview of GANB8R0-040CBA PDF

Datasheet Details

Part number	GANB8R0-040CBA
Manufacturer	nexperia ↗
File Size	956.86 KB
Description	40V bi-directional Gallium Nitride FET
Datasheet	GANB8R0-040CBA-nexperia.pdf

GANB8R0-040CBA Product details

Description

The GANB8R0-040CBA is a 40 V, 8.0 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package.

Features

Enhancement mode - normally-off power switch.
Bi-directional device.
Ultra high switching speed capability.
Ultra-low on-state resistance.
RoHS, Pb-free, REACH-compliant.
High efficiency and high power density.
Wafer Level Chip-Scale Package (WLCSP) 1.7 mm x 1.7 mm 3.

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Published: Apr 23, 2025 |