GANB8R0-040CBA Datasheet - nexperia

GANB8R0-040CBA, 40V bi-directional Gallium Nitride FET

WLCSP16 GANB8R0-040CBA 40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) 31 Janu

Features

* Enhancement mode - normally-off power switch
* Bi-directional device
* Ultra high switching speed capability
* Ultra-low on-state resistance
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Wafer Level Chip-Scale Pa

Applications

* High-side load switch
* OVP protection in smart phone USB port
* DC-to-DC converters
* Power switch circuits
* Stand-by power system 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDD drain-drain voltage ID drain current Ptot

GANB8R0-040CBA-nexperia.pdf