GANB8R0-040CBA Datasheet - nexperia

GANB8R0-040CBA 40V bi-directional Gallium Nitride FET

GANB8R0-040CBA Features

* Enhancement mode - normally-off power switch

* Bi-directional device

* Ultra high switching speed capability

* Ultra-low on-state resistance

* RoHS, Pb-free, REACH-compliant

* High efficiency and high power density

* Wafer Level Chip-Scale Pa

Datasheet Details

GANB8R0-040CBA

956.86 KB

40v bi-directional gallium nitride fet.

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