logo

GB02SHT01-46 Datasheet, Features, Application

GB02SHT01-46 High Temperature Silicon Carbide Power Schottky Diode

  High Temperature Silicon Carbide Power Schottky.

GeneSiC

GB02SHT01-46 - High Temperature Silicon Carbide Power Schottky Diode

  High Temperature Silicon Carbide Power Schottky Diode Features  100 V Schottky rectifier  210 °C maximum operating temperature  Zero reverse reco.
1.0 · rating-1
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts