GB02SHT01-46 Datasheet - GeneSiC

GB02SHT01-46, High Temperature Silicon Carbide Power Schottky Diode

High Temperature Silicon Carbide Power Schottky Diode .

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GB02SHT01-46-GeneSiC.pdf

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Datasheet Details

Part number:

GB02SHT01-46

Manufacturer:

GeneSiC

File Size:

371.92 KB

Description:

High Temperature Silicon Carbide Power Schottky Diode

Features

* 100 V Schottky rectifier
* 210 °C maximum operating temperature
* Zero reverse recovery charge
* Superior surge current capability
* Positive temperature coefficient of VF
* Temperature independent switching behavior
* Lowest figure of merit QC/IF
* Available screen

Applications

* Down Hole Oil Drilling
* Geothermal Instrumentation
* Solenoid Actuators
* General

GB02SHT01-46 Distributors

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GB02SHT01-46 High Temperature Silicon Carbide Power Schottky Diode GeneSiC

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