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GB02SHT01-46

High Temperature Silicon Carbide Power Schottky Diode

GB02SHT01-46 Features

* 100 V Schottky rectifier

* 210 °C maximum operating temperature

* Zero reverse recovery charge

* Superior surge current capability

* Positive temperature coefficient of VF

* Temperature independent switching behavior

* Lowest figure of merit QC/IF

* Available screen

GB02SHT01-46 Datasheet (371.92 KB)

Preview of GB02SHT01-46 PDF

Datasheet Details

Part number:

GB02SHT01-46

Manufacturer:

GeneSiC

File Size:

371.92 KB

Description:

High temperature silicon carbide power schottky diode.

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TAGS

GB02SHT01-46 High Temperature Silicon Carbide Power Schottky Diode GeneSiC

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