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GB02SHT01-46 High Temperature Silicon Carbide Power Schottky Diode

GB02SHT01-46 Description

  High Temperature Silicon Carbide Power Schottky Diode .

GB02SHT01-46 Features

* 100 V Schottky rectifier
* 210 °C maximum operating temperature
* Zero reverse recovery charge
* Superior surge current capability
* Positive temperature coefficient of VF
* Temperature independent switching behavior
* Lowest figure of merit QC/IF
* Available screen

GB02SHT01-46 Applications

* Down Hole Oil Drilling
* Geothermal Instrumentation
* Solenoid Actuators
* General

📥 Download Datasheet

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Datasheet Details

Part number
GB02SHT01-46
Manufacturer
GeneSiC
File Size
371.92 KB
Datasheet
GB02SHT01-46-GeneSiC.pdf
Description
High Temperature Silicon Carbide Power Schottky Diode

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High Temperature Silicon Carbide Power Schottky Diode GeneSiC
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