GB02N120 Datasheet (451.04 KB)
GB02N120
Infineon ↗ Technologies AG
451.04 KB
sgb02n120.
www.DataSheet4U.com www.DataSheet4U.com
SGP02N120,
Fast IGBT in NPT-technology
* 40lower Eoff compared to previous generation
* Short.
📁 Related Datasheet
GB02SHT01-46 - High Temperature Silicon Carbide Power Schottky Diode
(GeneSiC)
High Temperature Silicon Carbide Power Schottky Diode
Features
100 V Schottky rectifier 210 °C maximum operating temperature Zero reverse reco.
GB02SLT12-214 - Silicon Carbide Schottky Diode
(GeneSiC)
GB02SLT12-214 1200V 2A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• Low VF for High Temperature Operation • Enhanced Surge and Av.
GB02SLT12-252 - Silicon Carbide Schottky Diode
(GeneSiC)
GB02SLT12-252
1200 V SiC MPS™ Diode
Silicon Carbide Schottky Diode
Features
• High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.
GB01SHT06-CAL - High Temperature Silicon Carbide Power Schottky Diode
(GeneSiC)
High Temperature Silicon Carbide Power Schottky Diode
Features
650 V Schottky rectifier 210 °C maximum operating temperature Zero reverse reco.
GB01SHT06-CAU - High Temperature Silicon Carbide Power Schottky Diode
(GeneSiC)
High Temperature Silicon Carbide Power Schottky Diode
Features
650 V Schottky rectifier 210 °C maximum operating temperature Zero reverse reco.
GB01SHT12-CAL - High Temperature Silicon Carbide Power Schottky Diode
(GeneSiC)
High Temperature Silicon Carbide Power Schottky Diode
Features
1200 V Schottky rectifier 210°C maximum operating temperature Zero reverse reco.
GB01SLT06-214 - Silicon Carbide Schottky Diode
(GeneSiC)
GB01SLT06-214 650V 1A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• Low VF for High Temperature Operation • Enhanced Surge and Ava.
GB01SLT12-214 - Silicon Carbide Schottky Diode
(GeneSiC)
GB01SLT12-214 1200V 1A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• Low VF for High Temperature Operation • Enhanced Surge and Av.
