Datasheet4U Logo Datasheet4U.com

GB02SLT12-252

Silicon Carbide Schottky Diode

GB02SLT12-252 Features

* High Avalanche (UIS) Capability

* Enhanced Surge Current Capability

* Superior Figure of Merit QC/IF

* Low Thermal Resistance

* 175 °C Maximum Operating Temperature

* Temperature Independent Switching Behavior

* Positive Temperature Coefficie

GB02SLT12-252 Datasheet (468.71 KB)

Preview of GB02SLT12-252 PDF

Datasheet Details

Part number:

GB02SLT12-252

Manufacturer:

GeneSiC

File Size:

468.71 KB

Description:

Silicon carbide schottky diode.

📁 Related Datasheet

GB02SLT12-214 - Silicon Carbide Schottky Diode (GeneSiC)
GB02SLT12-214 1200V 2A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Low VF for High Temperature Operation • Enhanced Surge and Av.

GB02SHT01-46 - High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)
  High Temperature Silicon Carbide Power Schottky Diode Features  100 V Schottky rectifier  210 °C maximum operating temperature  Zero reverse reco.

GB02N120 - SGB02N120 (Infineon Technologies AG)
.. .. SGP02N120, Fast IGBT in NPT-technology • 40lower Eoff pared to previous generation • Short circuit withsta.

GB01SHT06-CAL - High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)
  High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  210 °C maximum operating temperature  Zero reverse reco.

GB01SHT06-CAU - High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)
  High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  210 °C maximum operating temperature  Zero reverse reco.

GB01SHT12-CAL - High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)
  High Temperature Silicon Carbide Power Schottky Diode Features  1200 V Schottky rectifier  210°C maximum operating temperature  Zero reverse reco.

GB01SLT06-214 - Silicon Carbide Schottky Diode (GeneSiC)
GB01SLT06-214 650V 1A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Low VF for High Temperature Operation • Enhanced Surge and Ava.

GB01SLT12-214 - Silicon Carbide Schottky Diode (GeneSiC)
GB01SLT12-214 1200V 1A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Low VF for High Temperature Operation • Enhanced Surge and Av.

TAGS

GB02SLT12-252 Silicon Carbide Schottky Diode GeneSiC

Image Gallery

GB02SLT12-252 Datasheet Preview Page 2 GB02SLT12-252 Datasheet Preview Page 3

GB02SLT12-252 Distributor