Part number:
GB02SLT12-252
Manufacturer:
GeneSiC
File Size:
468.71 KB
Description:
Silicon carbide schottky diode.
Datasheet Details
GB02SLT12-252 Features
* High Avalanche (UIS) Capability
* Enhanced Surge Current Capability
* Superior Figure of Merit QC/IF
* Low Thermal Resistance
* 175 °C Maximum Operating Temperature
* Temperature Independent Switching Behavior
* Positive Temperature Coefficie
Datasheet Details
GB02SLT12-252
GeneSiC
468.71 KB
Silicon carbide schottky diode.
GB02SLT12-252 Distributor
📁 Related Datasheet
GB02SLT12-214 Silicon Carbide Schottky Diode (GeneSiC)
GB02SHT01-46 High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)
GB02N120 SGB02N120 (Infineon Technologies AG)
GB01SHT06-CAL High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)
GB01SHT06-CAU High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)
GB01SHT12-CAL High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)
GB01SLT06-214 Silicon Carbide Schottky Diode (GeneSiC)
GB01SLT12-214 Silicon Carbide Schottky Diode (GeneSiC)