GB02SLT12-214 Datasheet, Diode, GeneSiC

GB02SLT12-214 Features

  • Diode
  • Low VF for High Temperature Operation
  • Enhanced Surge and Avalanche Robustness
  • Superior Figure of Merit QC/IF
  • Low Thermal Resistance
  • Low

PDF File Details

Part number:

GB02SLT12-214

Manufacturer:

GeneSiC

File Size:

411.46kb

Download:

📄 Datasheet

Description:

Silicon carbide schottky diode.

Datasheet Preview: GB02SLT12-214 📥 Download PDF (411.46kb)
Page 2 of GB02SLT12-214 Page 3 of GB02SLT12-214

GB02SLT12-214 Application

  • Applications
  • High Voltage Sensing
  • Solar Inverters
  • Electric Vehicles
  • High Frequency Converters
  • Batt

TAGS

GB02SLT12-214
Silicon
Carbide
Schottky
Diode
GeneSiC

📁 Related Datasheet

GB02SLT12-252 - Silicon Carbide Schottky Diode (GeneSiC)
GB02SLT12-252 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.

GB02SHT01-46 - High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)
  High Temperature Silicon Carbide Power Schottky Diode Features  100 V Schottky rectifier  210 °C maximum operating temperature  Zero reverse reco.

GB02N120 - SGB02N120 (Infineon Technologies AG)
.. .. SGP02N120, Fast IGBT in NPT-technology • 40lower Eoff pared to previous generation • Short circuit withsta.

GB01SHT06-CAL - High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)
  High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  210 °C maximum operating temperature  Zero reverse reco.

GB01SHT06-CAU - High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)
  High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  210 °C maximum operating temperature  Zero reverse reco.

GB01SHT12-CAL - High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)
  High Temperature Silicon Carbide Power Schottky Diode Features  1200 V Schottky rectifier  210°C maximum operating temperature  Zero reverse reco.

GB01SLT06-214 - Silicon Carbide Schottky Diode (GeneSiC)
GB01SLT06-214 650V 1A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Low VF for High Temperature Operation • Enhanced Surge and Ava.

GB01SLT12-214 - Silicon Carbide Schottky Diode (GeneSiC)
GB01SLT12-214 1200V 1A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Low VF for High Temperature Operation • Enhanced Surge and Av.

GB01SLT12-220 - Silicon Carbide Schottky Diode (GeneSiC)
GB01SLT12-220 Silicon Carbide Power Schottky Diode Features •1200 V Schottky rectifier •175 °C maximum operating temperature •Zero reverse recover.

GB01SLT12-252 - Silicon Carbide Schottky Diode (GeneSiC)
GB01SLT12-252 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.

Stock and price

GeneSic Semiconductor Inc
DIODE SIL CARB 1200V 2A DO214AA
DigiKey
GB02SLT12-214
368 In Stock
Qty : 1000 units
Unit Price : $2.25
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts