Part number:
GB01SHT06-CAL
Manufacturer:
GeneSiC
File Size:
287.26 KB
Description:
High temperature silicon carbide power schottky diode.
GB01SHT06-CAL Datasheet (287.26 KB)
* 650 V Schottky rectifier
* 210 °C maximum operating temperature
* Zero reverse recovery charge
* Superior surge current capability
* Positive temperature coefficient of VF
* Temperature independent switching behavior
* Lowest figure of merit QC/IF
* Available screen
GB01SHT06-CAL Datasheet (287.26 KB)
GB01SHT06-CAL
GeneSiC
287.26 KB
High temperature silicon carbide power schottky diode.
📁 Related Datasheet
GB01SHT06-CAU - High Temperature Silicon Carbide Power Schottky Diode
(GeneSiC)
High Temperature Silicon Carbide Power Schottky Diode
Features
650 V Schottky rectifier 210 °C maximum operating temperature Zero reverse reco.
GB01SHT12-CAL - High Temperature Silicon Carbide Power Schottky Diode
(GeneSiC)
High Temperature Silicon Carbide Power Schottky Diode
Features
1200 V Schottky rectifier 210°C maximum operating temperature Zero reverse reco.
GB01SLT06-214 - Silicon Carbide Schottky Diode
(GeneSiC)
GB01SLT06-214 650V 1A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• Low VF for High Temperature Operation • Enhanced Surge and Ava.
GB01SLT12-214 - Silicon Carbide Schottky Diode
(GeneSiC)
GB01SLT12-214 1200V 1A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• Low VF for High Temperature Operation • Enhanced Surge and Av.
GB01SLT12-220 - Silicon Carbide Schottky Diode
(GeneSiC)
GB01SLT12-220
Silicon Carbide Power Schottky Diode
Features
•1200 V Schottky rectifier •175 °C maximum operating temperature •Zero reverse recover.
GB01SLT12-252 - Silicon Carbide Schottky Diode
(GeneSiC)
GB01SLT12-252
1200 V SiC MPS™ Diode
Silicon Carbide Schottky Diode
Features
• High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.
GB02N120 - SGB02N120
(Infineon Technologies AG)
.. ..
SGP02N120,
Fast IGBT in NPT-technology
• 40lower Eoff pared to previous generation • Short circuit withsta.
GB02SHT01-46 - High Temperature Silicon Carbide Power Schottky Diode
(GeneSiC)
High Temperature Silicon Carbide Power Schottky Diode
Features
100 V Schottky rectifier 210 °C maximum operating temperature Zero reverse reco.
