GB01SHT06-CAU Datasheet, Diode, GeneSiC

GB01SHT06-CAU Features

• Diode
• 650 V Schottky rectifier
• 210 °C maximum operating temperature
• Zero reverse recovery charge
• Superior surge current capability
• Positive t

PDF File Details

Part number:

GB01SHT06-CAU

Manufacturer:

GeneSiC

File Size:

288.50kb

Download:

📄 Datasheet

Description:

High temperature silicon carbide power schottky diode.

GB01SHT06-CAU Application

• Applications
• Down Hole Oil Drilling
• Geothermal Instrumentation
• Solenoid Actuators
• General Purpose High-Tempe

TAGS

GB01SHT06-CAU

GeneSiC

📁 Related Datasheet

GB01SHT06-CAL - High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)
  High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  210 °C maximum operating temperature  Zero reverse reco.

GB01SHT12-CAL - High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)
  High Temperature Silicon Carbide Power Schottky Diode Features  1200 V Schottky rectifier  210°C maximum operating temperature  Zero reverse reco.

GB01SLT06-214 - Silicon Carbide Schottky Diode (GeneSiC)
GB01SLT06-214 650V 1A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Low VF for High Temperature Operation • Enhanced Surge and Ava.

GB01SLT12-214 - Silicon Carbide Schottky Diode (GeneSiC)
GB01SLT12-214 1200V 1A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Low VF for High Temperature Operation • Enhanced Surge and Av.

GB01SLT12-220 - Silicon Carbide Schottky Diode (GeneSiC)
GB01SLT12-220 Silicon Carbide Power Schottky Diode Features •1200 V Schottky rectifier •175 °C maximum operating temperature •Zero reverse recover.

GB01SLT12-252 - Silicon Carbide Schottky Diode (GeneSiC)
GB01SLT12-252 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.

GB02N120 - SGB02N120 (Infineon Technologies AG)
.. .. SGP02N120, Fast IGBT in NPT-technology • 40lower Eoff pared to previous generation • Short circuit withsta.

GB02SHT01-46 - High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)
  High Temperature Silicon Carbide Power Schottky Diode Features  100 V Schottky rectifier  210 °C maximum operating temperature  Zero reverse reco.

GB02SLT12-214 - Silicon Carbide Schottky Diode (GeneSiC)
GB02SLT12-214 1200V 2A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Low VF for High Temperature Operation • Enhanced Surge and Av.

GB02SLT12-252 - Silicon Carbide Schottky Diode (GeneSiC)
GB02SLT12-252 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.