Datasheet4U Logo Datasheet4U.com

GB01SLT12-252 Datasheet - GeneSiC

Silicon Carbide Schottky Diode

GB01SLT12-252 Features

* High Avalanche (UIS) Capability

* Enhanced Surge Current Capability

* Superior Figure of Merit QC/IF

* Low Thermal Resistance

* 175 °C Maximum Operating Temperature

* Temperature Independent Switching Behavior

* Positive Temperature Coefficie

GB01SLT12-252 Datasheet (452.29 KB)

Preview of GB01SLT12-252 PDF

Datasheet Details

Part number:

GB01SLT12-252

Manufacturer:

GeneSiC

File Size:

452.29 KB

Description:

Silicon carbide schottky diode.

📁 Related Datasheet

GB01SLT12-214 Silicon Carbide Schottky Diode (GeneSiC)

GB01SLT12-220 Silicon Carbide Schottky Diode (GeneSiC)

GB01SLT06-214 Silicon Carbide Schottky Diode (GeneSiC)

GB01SHT06-CAL High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)

GB01SHT06-CAU High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)

GB01SHT12-CAL High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)

GB02N120 SGB02N120 (Infineon Technologies AG)

GB02SHT01-46 High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)

GB02SLT12-214 Silicon Carbide Schottky Diode (GeneSiC)

GB02SLT12-252 Silicon Carbide Schottky Diode (GeneSiC)

TAGS

GB01SLT12-252 Silicon Carbide Schottky Diode GeneSiC

Image Gallery

GB01SLT12-252 Datasheet Preview Page 2 GB01SLT12-252 Datasheet Preview Page 3

GB01SLT12-252 Distributor