GB01SLT12-252 - Silicon Carbide Schottky Diode

GeneSiC

Datasheet Details

Part number	GB01SLT12-252
Manufacturer	GeneSiC
File Size	452.29 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GB01SLT12-252-GeneSiC.pdf

High Avalanche (UIS) Capability.
Enhanced Surge Current Capability.
Superior Figure of Merit QC/IF.
Low Thermal Resistance.
175 °C Maximum Operating Temperature.
Temperature Independent Switching Behavior.
Positive Temperature Coefficient of VF.
Extremely Fast Switching Speeds Package Case VRRM IF (Tc = 135°C) QC 2 1 TO-252-2L = 1200 V = 4A = 4 nC Advantages.
Low Standby Power Losses.
Improved Circuit.

📁 GB01SLT12-252 Similar Datasheet

Other Datasheets by GeneSiC

Published: Dec 26, 2024 |