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GB01SLT12-252 Silicon Carbide Schottky Diode

GB01SLT12-252 Description

GB01SLT12-252 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode .

GB01SLT12-252 Features

* High Avalanche (UIS) Capability
* Enhanced Surge Current Capability
* Superior Figure of Merit QC/IF
* Low Thermal Resistance
* 175 °C Maximum Operating Temperature
* Temperature Independent Switching Behavior
* Positive Temperature Coefficie

GB01SLT12-252 Applications

* Boost Diode in Power Factor Correction (PFC)
* Switched Mode Power Supplies (SMPS)
* AC-DC Converters & DC-DC Converters
* Freewheeling / Anti-parallel Diode in Inverters
* Solar Micro-inverters
* LED and HID Lighting
* Medical Imaging System

📥 Download Datasheet

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Datasheet Details

Part number
GB01SLT12-252
Manufacturer
GeneSiC
File Size
452.29 KB
Datasheet
GB01SLT12-252-GeneSiC.pdf
Description
Silicon Carbide Schottky Diode

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Silicon Carbide Schottky Diode GeneSiC
GeneSiC GB01SLT12-252-like datasheet