GB2X50MPS12-227 1200 V SiC MPS™ Diode Silicon C.
GeneSiC
GB2X50MPS12-227 - Silicon Carbide Schottky Diode
GB2X50MPS12-227 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability •.
