GeneSiC
GC50MPS33H - Silicon Carbide Schottky Diode
GC50MPS33H
TM
3300V 40A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
VRRM
=
IF (TC = 152°C) =
QC
=
3300 V 40 A 429 nC
Features
Pa
Rating:
1
★
(2 votes)
