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GC50MPS33H Datasheet Silicon Carbide Schottky Diode

Manufacturer: GeneSiC

Overview: GC50MPS33H TM 3300V 40A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode VRRM = IF (TC = 152°C) = QC = 3300 V 40 A 429.

Datasheet Details

Part number GC50MPS33H
Manufacturer GeneSiC
File Size 541.97 KB
Description Silicon Carbide Schottky Diode
Datasheet GC50MPS33H-GeneSiC.pdf

Key Features

  • Package.
  • Enhanced Surge and Avalanche Robustness.
  • Low VF for High Temperature Operation.
  • Superior Figure of Merit QC/IF.
  • Low Thermal Resistance.
  • Low Reverse Leakage Current.
  • Temperature Independent Fast Switching.
  • Positive Temperature Coefficient of VF G.
  • High dV/dt Ruggedness RIN Advantages.
  • High System Reliability E.
  • Optimal Price Performance.
  • Improved System Efficiency E.
  • Reduced Cool.

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GC50MPS33H Distributor