GC50MPS33H Silicon Carbide Schottky Diode

GeneSiC

Description

GC50MPS33H TM 3300V 40A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode VRRM = IF (TC = 152°C) = QC = 3300 V 40 A 429 nC .

📥 Download Datasheet

GC50MPS33H Datasheet Preview — Preview of GC50MPS33H PDF

Datasheet Specifications

Part number: GC50MPS33H
Manufacturer: GeneSiC
File Size: 541.97 KB
Datasheet: GC50MPS33H-GeneSiC.pdf
Description: Silicon Carbide Schottky Diode

Features

* Package
* Enhanced Surge and Avalanche Robustness
* Low VF for High Temperature Operation
* Superior Figure of Merit QC/IF
* Low Thermal Resistance
* Low Reverse Leakage Current
* Temperature Independent Fast Switching
* Positive Temperature

Applications

* EV Fast Chargers
* 1500V Solar Inverters
* Pulsed Power
* HVDC and Grid-Converters
* Industrial Power Supply
* Motor Traction
* Medical Imaging
* High Voltage Converters ENG MP Absolute Maximum Ratings (At TC = 25°C Unless Otherwise

GC50MPS33H Distributors

📁 Related Datasheet

GC500 GC501 GC5018 GC502 GC5040-220M GC507

📌 All Tags

GC50MPS33H Silicon Carbide Schottky Diode GeneSiC

GeneSiC GC50MPS33H-like datasheet

GC50MPS06-247

GC50MPS12-247