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GC50MPS12-247
1200V 50A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds
Package
Case
K
VRRM IF (Tc = 135°C) QC
Case K
A
TO-247-2
A
= 1200 V = 70 A = 110 nC
Advantages
• Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device Capacitance • Low Reverse Leakage Current
Applications
• Boost Diode in Power Factor Correction (P
GC50MPS12-247 Datasheet
