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GC50MPS12-247 - Silicon Carbide Schottky Diode

Datasheet Summary

Features

  • High Avalanche (UIS) Capability.
  • Enhanced Surge Current Capability.
  • Superior Figure of Merit QC/IF.
  • Low Thermal Resistance.
  • 175 °C Maximum Operating Temperature.
  • Temperature Independent Switching Behavior.
  • Positive Temperature Coefficient of VF.
  • Extremely Fast Switching Speeds Package Case K VRRM IF (Tc = 135°C) QC Case K A TO-247-2 A = 1200 V = 70 A = 110 nC Advantages.
  • Low Standby Power Losses.
  • Imp.

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Datasheet preview – GC50MPS12-247

Datasheet Details

Part number GC50MPS12-247
Manufacturer GeneSiC
File Size 322.08 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GC50MPS12-247 Datasheet
Additional preview pages of the GC50MPS12-247 datasheet.

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Full PDF Text Transcription

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GC50MPS12-247 1200V 50A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds Package Case K VRRM IF (Tc = 135°C) QC Case K A TO-247-2 A = 1200 V = 70 A = 110 nC Advantages • Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device Capacitance • Low Reverse Leakage Current Applications • Boost Diode in Power Factor Correction (P
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