GH100 Datasheet | Specifications & PDF Download

Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 High Speed PT IGBTs for 50-150kHz switching V= CES IC110 = V ≤ CE(sat) t = fi

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Description CRMTGH1002A N-channel Enhancement Mode Power MOSFET Features Applications l 100V, 290A l Load Switch RDS(ON) < 2mΩ @ VGS = 10V l P

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CRMGGH1004A N-Channel 100V, 3.6mΩ Typ. Power MOSFET Description Features l 100V, 125A D RDS(ON) Typ = 3.6mΩ @ VGS = 10V l Advanced Split Gate Tren

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CRMCGH1003B N-Channel 100V, 3.8mΩ Typ. Power MOSFET Description Features l 100V, 150A D RDS(ON) Typ = 3.8mΩ @ VGS = 10V l Advanced Split Gate Tren

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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CRMKGH1004A N-Channel 100V, 4.9mΩ Typ. Power MOSFET Description Features l 100V, 110A D RDS(ON) Typ = 4.9mΩ @ VGS = 10V l Advanced Split Gate Tren

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THYRISTOR MODULE 100A / 1600V FEATURES * Isolated Base * 3 Phase Converter with Rush-Current Controllable Thyristor * High Surge Capability * UL Recog

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FLAT TYPE METAL CLAD WIRE-WOUND Resistors GH Series (GH ) FEATURESFEATURES gHigh power rating, and ultra precision. gStandard winding & non-inductiv

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ＴＨＹＲＩＳＴＯＲ ■ CIRCUIT 100Ａ Ａvg 1600 Ｖolts ■ OUTLINE DRAWING PGH100N16 Dimension:［mm］ ・ Part of Diode Bridge & Thyristor ■ Maximum Ratings Paramete

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THYRISTOR MODULE 100A / 800V FEATURES * Isolated Base * 3 Phase Converter with Rush-Current Controllable Thyristor * High Surge Capability * UL Recogn

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RGH series,high-power and high-precision metal film chip resistors Resistors with high power in small size are realized as 1/6W for 1.6ϫ0.8mm(0603), 1

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ＴＨＹＲＩＳＴＯＲ ■ CIRCUIT 100Ａ Ａvg 800 Ｖolts ■ OUTLINE DRAWING PGH100N8 Dimension:［mm］ ・ Part of Diode Bridge & Thyristor ■ Maximum Ratings Parameter

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