PGH100N8 (Nihon Inter Electronics)
THYRISTOR
ＴＨＹＲＩＳＴＯＲ
■ CIRCUIT
100Ａ Ａvg 800 Ｖolts
■ OUTLINE DRAWING
PGH100N8
Dimension:［mm］
・ Part of Diode Bridge & Thyristor
■ Maximum Ratings
Parameter
(2 views)
RGH1005-2B (susumu)
high-power and high-precision metal film chip resistors
RGH series,high-power and high-precision metal film chip resistors
Resistors with high power in small size are realized as 1/6W for 1.6ϫ0.8mm(0603), 1
(1 views)
PGH10016AM (Nihon Inter Electronics Corporation)
THYRISTOR MODULE
THYRISTOR MODULE
100A / 1600V FEATURES
* Isolated Base * 3 Phase Converter with Rush-Current Controllable Thyristor * High Surge Capability * UL Recog
(1 views)
PGH1008AM (Nihon Inter Electronics Corporation)
THYRISTOR MODULE
THYRISTOR MODULE
100A / 800V FEATURES
* Isolated Base * 3 Phase Converter with Rush-Current Controllable Thyristor * High Surge Capability * UL Recogn
(1 views)
GH100 (Futaba Electric)
(GH Series) Flat Type Metal Clad Wire-Wound Resistors
FLAT TYPE METAL CLAD WIRE-WOUND Resistors
GH Series (GH )
FEATURESFEATURES
gHigh power rating, and ultra precision. gStandard winding & non-inductiv
(1 views)
GBD160808PGH100N (GOTREND)
Multilayer Ferrite Chip Bead
Product Series Code File Version Established Date Latest Edit Date
GBD
GBD-V3R2 2009.07.24 2010.09.28
Brand Editor Description Pages
GOTREND Teddy
(1 views)
GBD100505PGH100N (GOTREND)
Multilayer Ferrite Chip Bead
Product Series Code File Version Established Date Latest Edit Date
GBD
GBD-V3R2 2009.07.24 2010.09.28
Brand Editor Description Pages
GOTREND Teddy
(1 views)
PGH100N16 (Nihon Inter Electronics)
THYRISTOR
ＴＨＹＲＩＳＴＯＲ
■ CIRCUIT
100Ａ Ａvg 1600 Ｖolts
■ OUTLINE DRAWING
PGH100N16
Dimension:［mm］
・ Part of Diode Bridge & Thyristor
■ Maximum Ratings
Paramete
(1 views)
CRMTGH1002A (CRM Microelectronics)
N-Channel Power MOSFET
Description
CRMTGH1002A
N-channel Enhancement Mode Power MOSFET
Features
Applications
l 100V, 290A
l Load Switch
RDS(ON) < 2mΩ @ VGS = 10V
l P
(1 views)
CRMCGH1003B (CRM Microelectronics)
N-Channel Power MOSFET
CRMCGH1003B
N-Channel 100V, 3.8mΩ Typ. Power MOSFET
Description
Features
l 100V, 150A
D
RDS(ON) Typ = 3.8mΩ @ VGS = 10V
l Advanced Split Gate Tren
(1 views)
CRMGGH1004A (CRM Microelectronics)
N-Channel Power MOSFET
CRMGGH1004A
N-Channel 100V, 3.6mΩ Typ. Power MOSFET
Description
Features
l 100V, 125A
D
RDS(ON) Typ = 3.6mΩ @ VGS = 10V
l Advanced Split Gate Tren
(1 views)
CRMKGH1004A (CRM Microelectronics)
N-Channel Power MOSFET
CRMKGH1004A
N-Channel 100V, 4.9mΩ Typ. Power MOSFET
Description
Features
l 100V, 110A
D
RDS(ON) Typ = 4.9mΩ @ VGS = 10V
l Advanced Split Gate Tren
(1 views)
IXGH100N30C3 (IXYS)
High Speed PT IGBT
Preliminary Technical Information
GenX3TM 300V IGBT IXGH100N30C3
High Speed PT IGBTs for 50-150kHz switching
V= CES
IC110 =
V ≤ CE(sat)
t
=
fi
(1 views)
