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IXGH100N30C3 - High Speed PT IGBT

Key Features

  • z High Frequency IGBT z Square RBSOA z High avalanche capability z Drive simplicity with MOS Gate Turn-On z High current handling capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 High Speed PT IGBTs for 50-150kHz switching V= CES IC110 = V ≤ CE(sat) t = fi typ 300V 100A 1.85V 94ns Symbol VCES VCGR VGES VGEM IC25 I C110 ICM IA E AS SSOA (RBSOA) PC T J TJM T stg TL T SOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (limited by leads) T C = 110°C (chip capability) TC = 25°C, 1ms TC = 25°C T C = 25°C VGE= 15V, TVJ = 125°C, RG = 2Ω Clamped inductive load @ ≤ 300V TC = 25°C Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Mounting torque Maximum Ratings 300 V 300 V ±20 V ±30 V 75 A 100 A 500 A 100 A 500 mJ ICM = 200 A 460 -55 ... +150 150 -55 ... +150 300 260 1.