GP10 Datasheet | Specifications & PDF Download

RGP10A THRU RGP10M Features 1.0 AMP. Glass Passivated Junction Fast Recovery Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere DO-41 Hig

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ELECTRONIC GIANT EGP1000W EG8010  SPWM  EGS001 2011 © REV 1.0 2011.05.05 EGP1000W                                                          

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STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES

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JMGP10V10A Description JMG N-channel Enhancement Mode Power MOSFET Features  100V,7A RDS(ON)< 140mΩ @ VGS =10V RDS(ON)< 300mΩ @ VGS =4.5V  Advanc

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Silan Microelectronics SVGP104R1NL5_Datasheet 136A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP104R1NL5 is an N-channel enhancement mode power MOS field

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Silan Microelectronics SVGP101R5NL_Datasheet 320A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP101R5NL is an N-channel enhancement mode power MOS field e

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Silan Microelectronics SVGP103R0NT(P7)_Datasheet 180A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP103R0NT(P7) is an N-channel enhancement mode power MOS

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Silan Microelectronics SVGP103R0NT(P7)_Datasheet 180A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP103R0NT(P7) is an N-channel enhancement mode power MOS

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Silan Microelectronics SVGP107R0NL5_Datasheet 90A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP107R0NL5 is an N-channel enhancement mode power MOS field

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Silan Microelectronics SVGP104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP104R5NT(S) is an N-channel enhancement mode power MOS f

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Silan Microelectronics SVGP104R5NAT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP104R5NAT(S) is an N-channel enhancement mode power MOS

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Silan Microelectronics SVGP104R5NAT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP104R5NAT(S) is an N-channel enhancement mode power MOS

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YJG25GP10AQ-VB YJG25GP10AQ-VB Datasheet P-Channel 1 00-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 100 0.075 at VGS = - 10 V 0.08 0 at V

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SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low c

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Silan Microelectronics SVGP104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP104R5NT(S) is an N-channel enhancement mode power MOS f

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www.DataSheet.co.kr GP10A thru GP10Y Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application structure

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RGP10A, RGP10B, RGP10D, RGP10G, RGP10J, RGP10K, RGP10M www.vishay.com Vishay General Semiconductor Glass Passivated Junction Fast Switching Plastic

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MCC Features
     omponents 21201 Itasca Street Chatsworth  # $ % # RGP10A THRU RGP10M 1

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DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. FSPD-100-1B 1 AM

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EGP10A THRU EGP10M Features 1.0 AMP. Glass Passivated High Efficient Plastic Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere DO-41 Pla

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