logo
GS-065-011-6-LR

GS-065-011-6-LR DataSheet

GaN Systems

GS-065-011-6-LR - 700V E-mode GaN transistor

· 7 Hits • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 125 mΩ • IDSmax,D...
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy