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GS-065-011-6-LR

700V E-mode GaN transistor

GS-065-011-6-LR Features

* 700 V enhancement mode power transistor

* 850 V transient drain-to-source voltage

* Bottom-cooled, 8x8 mm PDFN package

* RDS(on) = 125 mΩ

* IDSmax,DC = 12.2 A / IDSmax,Pulse = 20 A

* Ultra-low FOM

* Simple gate drive requirements (0 V to 6 V)

GS-065-011-6-LR General Description

The GS-065-011-6-LR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-.

GS-065-011-6-LR Datasheet (860.59 KB)

Preview of GS-065-011-6-LR PDF

Datasheet Details

Part number:

GS-065-011-6-LR

Manufacturer:

GaN Systems

File Size:

860.59 KB

Description:

700v e-mode gan transistor.

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GS-065-011-6-LR 700V E-mode GaN transistor GaN Systems

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